| 摘要 |
PROBLEM TO BE SOLVED: To reduce defects of a polysilicon film by emitting light for irradiating an amorphous semiconductor after forming an intrinsic semiconductor region, either or both a dono impurity region or an acceptor impurity region and a third impurity region. SOLUTION: A base protection film 302 is formed on a substrate 301 and then a semiconductor thin film 303 such as an intrinsic silicon film which becomes an active layer of a TFT(thin film transistor) is formed on the base protection film 302. After an insulation film 350 is deposited on the semiconductor thin film 303 and a third impurity region 320 enclosing a channel part and a source/drain region is formed by a region 315 of either a dono impurity region for adding a dono element such as phosphorus and arsenic to the semiconductor thin film 303 and an acceptor impurity region for adding an acceptor element such as boron and aluminum, or both thereof, by ion implantation, laser irradiation is carried out while the substrate 301 is heated.
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