| 摘要 |
PROBLEM TO BE SOLVED: To provide a radiation sensitive resist composition capable of forming a resist pattern high in resolution and good in sectional forms and high in transmittance of F2 laser beams and suitable for a lithographic process of forming ultra-fine resist patterns having <=0.15 μm by using F2 laser beams. SOLUTION: This radiation sensitive resist composition comprises (A) (a1) siloxane units having alkali-soluble groups, (a2) the siloxane (a1) units having the alkali-soluble groups substituted by acid-dissociable dissolution-restraining groups and (a3) the siloxane units having alkali-insoluble groups having no acid dissociable group, and (B) an acid generator made of compound to be induced to generate an acid by irradiation with radiation. |
