发明名称 AL ALLOY ELECTRODE FILM AND SPUTTERING TARGET
摘要 PROBLEM TO BE SOLVED: To provide an Al alloy electrode film and a sputtering target used for forming the same which has an excellent dry-etching property. SOLUTION: This electrode film is composed of a composition in which 1-5 atom % of at least one or more elements elected from B, C, 4a group, 5a group, 6a group, Fe, Co, Ni, Ru, Rh, Pd and Pt are contained in total, 100 weight ppm or less of Li, Na, K, Rb, Cs, Be, Mg, Ca, Sr and Ba are contained and the rest is Al. The pattern thereof is formed by dry etching. This electrode film is obtained by a sputtering target corresponding to the above composition.
申请公布号 JP2001053024(A) 申请公布日期 2001.02.23
申请号 JP19990227309 申请日期 1999.08.11
申请人 HITACHI METALS LTD;TOKYO ELECTRON LTD 发明人 TAKASHIMA HIROSHI;AKAI MAKOTO
分类号 H01L21/302;C23C14/34;G02F1/1343;H01L21/28;H01L21/285;H01L21/3065;(IPC1-7):H01L21/28;G02F1/134;H01L21/306 主分类号 H01L21/302
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