| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device that can simplify the manufacturing process, while reducing the inter-wiring capacitance. SOLUTION: This semiconductor device is provided with a silicon substrate 1, a reformed photoresist film 4 and an embedded wiring 6. The reformed photoresist film 4 is formed on the main surface of the silicon substrate 1, and its film quality is improved through the introduction of impurities and also has an aperture 5. The embedded wiring 6 is formed so as to fill the aperture 5 of the reformed photoresist film 4.
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