发明名称 MANUFACTURE AND STRUCTURE OF COLD CATHODE ARRAY ELEMENT AND COLD CATHODE ARRAY IMAGE PICK-UP ELEMENT
摘要 <p>PROBLEM TO BE SOLVED: To combine a cold cathode array and a driving control circuit by installing a region selecting circuit for selecting an electron beam emitting region of a cold cathode array emitting electron beams and a driving control circuit for controlling electron beam emission on the same required conductive semiconductor board, and connecting them. SOLUTION: A cold cathode array region for emitting electron beams are formed by forming a silicon oxide film 2 and a silicon nitride film 3 on a semiconductor n-type silicon board 1. A driving control circuit composed of a region selecting circuit for selecting an electron beam emission region of a cold cathode array and a level conversion circuit for controlling electron beam emission is constituted in a CMOS logic circuit region. An N/P MOS transistor region is formed with a photo resist 91, by exposure of required pattern, and etching, and cold cathode arrays formed in each process and the driving control circuit are connected. A cold cathode array image pick-up element can be manufactured by combining on the same board.</p>
申请公布号 JP2001052599(A) 申请公布日期 2001.02.23
申请号 JP19990222840 申请日期 1999.08.05
申请人 HITACHI DENSHI LTD;NIPPON HOSO KYOKAI <NHK> 发明人 YAMAGISHI TOSHIRO;OKAZAKI SABURO;NANBA MASAKAZU;OKAMURA NORIO;ITO RYOICHI;KATSUHARA YUKINORI;INOUE SHIGERU;SAITO MASANORI
分类号 H01J9/02;H01J1/304;H01J29/04;H01J29/96;H01J31/38;H01L27/14;(IPC1-7):H01J9/02 主分类号 H01J9/02
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