| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for fabricating an ROM semiconductor device, in which the masking process related to ROM programming can be carried out in a part as close to the end of fabrication period as possible, and the period required for completion is shortened. SOLUTION: The continuous series system of a source/drain diffusion layer 14, straddling a gate electrode 13 constituting an address line, is connected electrically at prescribed parts, with an upper layer interconnection with regard to a data line. With regard to the series system of the source/drain diffusion layer 14, they are short-circuited all previously through a first layer metallization ALA. Subsequently, an insulating film is formed on the metal wiring ALA, and after final stage is reached, the metal wiring ALA is removed selectively as shown by a dashed line ET to eliminate short circuit state of the source/drain diffusion layer selectively so that ROM data can be written. |
