| 摘要 |
PROBLEM TO BE SOLVED: To unify crystallinity when crystallizing a semiconductor thin film of a large area by overlapping laser light radiation region. SOLUTION: In a shaping process, laser light 50 emitted from a source 51 of laser light is shaped into laser light 50 having a specified radiation region and a specified intensity distribution. In a reading process, the laser light 50 is repeatedly radiated on a semiconductor thin film 2 formed beforehand on a substrate 1 by scanning so that the radiation regions may be partly overlapped. By these two processes, the semiconductor thin film 2 is crystallized. At that time, the laser light 50 is so shaped that a cross-sectional intensity distribution of the laser light 50 in the direction in which the radiation region is scanned may be of a projecting shape, in which its peak is located closer to the front end than the middle part between the front end and the rear end with regard to the scanning direction. To be more specific, the laser light 50 is so shaped that the intensity RL at the front end of the radiation region is reduced by at most 30% from the intensity PL at the peak, and the intensity TL at the rear end of the radiation region is reduced by at least 5% from the intensity PL at the peak.
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