发明名称 HIGH-VOLTAGE SEMICONDUCTOR SWITCH
摘要 PROBLEM TO BE SOLVED: To make a DC high-voltage switch used in a high voltage pulse generator or the like into a semiconductor. SOLUTION: In a semiconductor device, the two sets of a gate circuits composed of two semiconductor switch elements 4, a ring core type pulse transformer 1 and a rectifying/reset circuit are installed on one insulation substrate, the output voltage of each of the gate circuit is connected to each of the gate terminals of the semiconductor switch 4, units 13 for which the switch elements are serially connected are successively piled up and cascade connected through an insulating material 7 and the transformers 5 of each of the units are through- connected by a high insulation cable 2, as shown in the figure. A clock pulse current synchronized with input signals is made to flow to the internal primary conductor of the cable 2, a secondary voltage induced in the pulse transformers 1 of each of the units is restored to original input signals in the rectifying/reset circuit, the restored signals are transmitted to the gate terminals of each of the switch elements 4 and the semiconductor switch elements 4 of all the units are switched simultaneously.
申请公布号 JP2001053596(A) 申请公布日期 2001.02.23
申请号 JP19990253428 申请日期 1999.08.04
申请人 IWAI HIROSHI 发明人 IWAI HIROSHI
分类号 H03K17/10;H03K17/687 主分类号 H03K17/10
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