| 摘要 |
PROBLEM TO BE SOLVED: To rationalize diffusion process of a semiconductor device. SOLUTION: In a method for fabricating a semiconductor device, having an isolation film 9 formed on a P-type semiconductor substrate 1, a gate insulation film 11 formed in the region other than the isolation film 9, a selective oxide film 10 thicker than the gate insulation film 11, a gate electrode 12 formed on the gate insulation film 11 while straddling partially over the selective oxide film 10, and an LN-type source-drain layer 4 formed contiguously to the gate electrode 12, diffusion for forming the LN-type source-drain layer 4 is carried out through the same process as diffusion for forming an FP layer 7 beneath the isolation film 9.
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