| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory in which inversion write can be performed at high speed by avoiding a trouble that voltage applied to a bit line through a common data line conflicts with amplifying operation of a bit line potential by a sense amplifier, when inversion data are written in a memory cell, in a semiconductor memory constituted so that voltage of a bit line is amplified using a sense amplifier. SOLUTION: This device is provided with a sense amplifier control circuit 30 which can control a sense amplifier SA to be semi-active or non-active at timing when bit lines BL,/BL and common data lines IO,/IO are connected by a column switch 21. The device is constituted so that write speed of the inversion data for a memory cell is increased not by operating the sense amplifier SA at the time of writing data in an arbitrary memory cell MC.
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