SEMICONDUCTOR PRESSURE SENSOR AND FABRICATION THEREOF

摘要

PROBLEM TO BE SOLVED: To obtain a semiconductor pressure sensor, and a manufacturing method thereof, in which long term stability is enhanced significantly by eliminating respark to a reference pressure chamber. SOLUTION: The semiconductor pressure sensor measures pressure by detecting variation of capacitance between a diaphragm part 3 formed at a part of a silicon body 1 and an electrode film 4 formed on a glass substrate 2 bonded to the silicon body 1. Sealing performance is enhanced by removing protrusions of a bonding plane produced on an insulating layer 5 formed on a lead-out circuit 4a selectively thereby flattening the bonding face.