| 摘要 |
PROBLEM TO BE SOLVED: To etch iridium or iridium oxide at a high speed and obtain a shape having a high anisotropy. SOLUTION: Ir/IrO2 films 23 and 24 are formed on a silicon thermal oxidation film 22 formed on a silicon substrate 21 by sputtering, and then the films 24 and 23 are continuously dry etched using a resist mask pattern 25 as a mask. A mixture gas of SF6 and Ar are used as an etching gas. IrF6 having a high saturation vapor pressure can be formed with use of the etching gas containing mainly SF6. As a result, the reaction of generating IrF6 at the time of etching is proceeded and the formed IrF6 is evaporated. As a result, an etching rate is improved and a shape having a high anisotropy can be easily attained. |
