发明名称 PLASMA PROCESSING METHOD AND APPARATUS
摘要 PROBLEM TO BE SOLVED: To obtain a plasma processing method and apparatus which heats a location within a vacuum to be irradiated with high frequency microwave for plasma excitation without reducing the plasma density within the vacuum bath. SOLUTION: In the plasma processing apparatus, high frequency (13.5 MHz) microwave for plasma excitation is externally irradiated into a vacuum chamber 2 as a vacuum bath in which an object to be processed is placed and which is tightly closed, an irradiation means 5 is provided on a ceiling plate 4 as a location to be irradiated with high frequency (2450 MHz) microwave different in frequency from that of the first-mentioned frequency (13.56 MHz), and a dielectric member 6 for passing the high frequency (13.56 MHz) microwave therethrough and for absorbing the microwave (2450 MHz) is provided to the ceiling plate 4 of the vacuum chamber 2.
申请公布号 JP2001053069(A) 申请公布日期 2001.02.23
申请号 JP19990225858 申请日期 1999.08.10
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 MORI SATOSHI;WATANABE TOSHIYUKI
分类号 H01L21/302;H01L21/3065;H01L21/31;H05H1/46 主分类号 H01L21/302
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