发明名称 |
PLASMA PROCESSING METHOD AND APPARATUS |
摘要 |
PROBLEM TO BE SOLVED: To obtain a plasma processing method and apparatus which heats a location within a vacuum to be irradiated with high frequency microwave for plasma excitation without reducing the plasma density within the vacuum bath. SOLUTION: In the plasma processing apparatus, high frequency (13.5 MHz) microwave for plasma excitation is externally irradiated into a vacuum chamber 2 as a vacuum bath in which an object to be processed is placed and which is tightly closed, an irradiation means 5 is provided on a ceiling plate 4 as a location to be irradiated with high frequency (2450 MHz) microwave different in frequency from that of the first-mentioned frequency (13.56 MHz), and a dielectric member 6 for passing the high frequency (13.56 MHz) microwave therethrough and for absorbing the microwave (2450 MHz) is provided to the ceiling plate 4 of the vacuum chamber 2. |
申请公布号 |
JP2001053069(A) |
申请公布日期 |
2001.02.23 |
申请号 |
JP19990225858 |
申请日期 |
1999.08.10 |
申请人 |
MATSUSHITA ELECTRIC IND CO LTD |
发明人 |
MORI SATOSHI;WATANABE TOSHIYUKI |
分类号 |
H01L21/302;H01L21/3065;H01L21/31;H05H1/46 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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