发明名称 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To enable manufacture of a semiconductor device accommodated in a hollow package, while maintaining high frequency characteristic, through a simpler technique. SOLUTION: An island part 26 and electrode parts 27, 28 on both sides of the island part 26 are formed on the surface of a common substrate 21. A semiconductor chip 29 is die-bonded to the island part, and wire-bonded to the electrode parts 27, 28. The whole of the common substrate 21 is tightly closed with a common lid body 36, and an airtight space is constituted for each element mounting part 41. In each of the mounting parts 41, the lid body is isolated from the substrate 21, and an individual semiconductor device is formed.
申请公布号 JP2001053180(A) 申请公布日期 2001.02.23
申请号 JP19990223410 申请日期 1999.08.06
申请人 SANYO ELECTRIC CO LTD 发明人 HYODO HARUO;KIMURA SHIGEO;SHIBAZAKI TAKANORI
分类号 H01L23/12;H01L23/02;H01L23/055;H01L23/10;H01L23/28;H01L23/66 主分类号 H01L23/12
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