| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit device that enables high speed operation of ports, having at least either of functions between the input port and output port. SOLUTION: This port is divided to a part (region A), to where the voltage of 3 V is applied to the gate electrode, and a part (region B) where the voltage of 3 V or 5 V is applied to the gate electrode. The gate oxide film of a MOS field effect transistor allocated in the region A is formed in a comparatively small thickness. The gate oxide film of the MOS field effect transistor allocated in the region B is formed in a comparatively large thickness. The part operating with 3 V (region A) and the part operating with 5 V (region B) are divided regularly.
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