| 摘要 |
PROBLEM TO BE SOLVED: To form a sulfide layer on a sulfur layer to protect the sulfur layer and prevent detachment of the sulfur layer by dipping a region which includes the surface of a compound semiconductor in a solution including sulfur ions, to form the sulfur layer on the surface and then dipping it in a cation solution which reacts with sulfur and generates a sulfide. SOLUTION: After a compound semiconductor 1 is subjected to normal treatment with sulfur, a thin sulfur layer 2 is formed on the surface of the compound semiconductor 1. After that treatment, the compound semiconductor 1 is treated with a cation solution, to coat the sulfur layer 2 with a sulfide layer 4. Even if an antireflection film 3 is formed, the sulfide layer 4 sticks firmly against the impacts due to light, electrons, and ions. As a result, the sulfur layer 2 formed under the sulfide layer 4 can be kept thick. Then, a continuous action test is conducted, however, the sulfur layer 2 can be kept thick as is, since the sulfide layer 4 prevents the diffusion of sulfur from the sulfur layer 2. By this mechanism, the treatment with sulfur can be stabilized, leading to the extension of the average service life of a semiconductor laser device.
|
