| 摘要 |
PROBLEM TO BE SOLVED: To increase production yield, while reducing continuity faults by filling the interconnection plane including interconnection trenches formed on a semiconductor substrate or contact holes made in the interconnection trenches with liquid thereby preventing generation of void in the interconnection plane of a wafer. SOLUTION: Trenches in an insulation film can be filled with pure water 102, and bubbles can be removed by spraying pure water to the interconnection plane prior to a plating process, and plating liquid 108 can be spread sufficiently in the trench in the following process. After filling a cell 107, the plating liquid 108 is jetted uniformly from the central part of a semiconductor substrate 1a toward the end part thereof. After the plating liquid 108 touches the semiconductor substrate 1a, electrolysis is started, and a field plating layer of 0.7μm thickness is formed on the interconnection plane of the semiconductor substrate 1a. After the semiconductor substrate is cleaned by spraying pure water from a nozzle 101 which is reciprocated, a rotor 104 is rotated and the semiconductor substrate 1a is dried. According to this method, a good conductor film can be formed in a fine trench without generating voids.
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