LAMINATED SUBSTRATE AND MANUFACTURE THEREOF

摘要

PROBLEM TO BE SOLVED: To allow as sharp and smooth carrier concentration profile with no drop in a transition region from an N+ silicon water to an N- silicon wafer. SOLUTION: An N- silicon wafer is laminated on the surface of an N+ silicon wafer. An even and high-resistance N- layer con be manufactured easily on the active layer side of a laminated substrate at a low cost. Boron concentration on a lamination interface is get of 1×1013-5×1015 atoms/cm3, with Sb or As employed as a dopant for a high concentration. The carrier concentration profile in a transition region is sharp to dissolve drop. As a result, an N-/N+ type laminated substrate is manufactured with a high yield. So, a high-resistance wafer is provided as an alternate for an epitaxial wafer.