| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device and a method of manufacturing it, where hydrogen is prevented from remaining in a gate insulating film, interface mismatching is restrained from occurring in the gate insulating film, and a transistor can be prevented from varying in a threshold voltage and decreasing in an ON-state current. SOLUTION: A semiconductor device is equipped with a gate electrode formed on a silicon substrate 11 through the intermediary of a gate insulating film 12, where the gate insulating film 12 is formed of silicon oxide nitride film of one-layered structure where oxygen atoms are mixed and distributed in nitrogen atoms. Oxygen atoms are distributed uniformly or gently in concentration in the gate insulating film 12 within a certain range in the thickness direction of the film continuously from its interface with the silicon substrate to the top surface.
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