| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device and a method of manufacturing the semiconductor device, that can improve coverage of a wiring layer formed at a contact hole aperture in a plurality of contact holes which are formed close to the interlayer insulation film and obtain a contact structure having higher reliability. SOLUTION: Contact holes 4, having the tapered shape as the upper part of aperture, are formed close to within an interlayer insulation film 3. A plug forming wiring film 5 is then formed by embedding into the contact holes 4. The projected part of the interlayer insulating film 3 between the approximated contact holes is planarized with CMP method or the like, and thereby the interlayer insulation film 3 between the approximated contact holes, where the projected part is eliminated and the plug 6 from which the upper surface are planarized can be formed. The contact structure can be formed by forming an AlCu film with the CVD method or sputtering method and also forming the upper electrode wiring with the lithographic and dry-etching techniques.
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