METHOD FOR FORMING SEMICONDUCTOR DEVICE HAVING SELF-ALIGNED CONTACT HOLE

摘要

PURPOSE: A fabrication method of a semiconductor device is provided to enhance a property of a gate oxide layer and a property of a pn junction(a junction leakage current) by forming a gate spacer using a silicon-rich nitride material in spite of a silicon nitride material. CONSTITUTION: A first insulting layer is formed on a semiconductor substrate(10) having at least one of an integrated circuit including a gate electrode pattern. A gate spacer is formed on a sidewall of the gate electrode(16) pattern by etching the first insulating layer to expose a surface of the substrate, wherein the gate spacer is formed by a silicon-rich nitride layer. A second insulating layer is formed on an entire surface of the substrate. A photoresist pattern is formed on the second insulating layer of a top of the photoresist pattern. A self-aligned buried contact hole(28) is formed on the second insulating layer by etching the second insulating layer using the photoresist pattern as a mask.