| 摘要 |
<p>A halftone phase shift photomask which does not change in its transmittance and phase angle even when exposed for an extended time to excimer laser used for exposing, and blanks for the photomask, the halftone phase shift photomask (108) comprising a pattern of a halftone phase shift film (102) formed on a transparent substrate (101) and containing at least chromium and fluorine, wherein a film exposed to rays of light (109) having a wavelength practically absorbed by the halftone phase shift film (102) is patterned to thereby reduce optical characteristics changes when irradiated with exposing excimer laser.</p> |
