| 发明名称 |
p-TYPE SINGLE CRYSTAL ZINC OXIDE HAVING LOW RESISTIVITY AND METHOD FOR PREPARATION THEREOF |
| 摘要 |
A p-type single crystal zinc oxide having a low resistivity can be prepared by a method wherein, when a single crystal of zinc oxide is formed by the thin film forming method, a n-type dopant and p-type dopant are doped in a manner such that the concentration of the p-type dopant is higher than that of the n-type dopant. Further, doping an element belonging to Group II in addition to the above enables the stabilization of oxygen. |
| 申请公布号 |
WO0112884(A1) |
申请公布日期 |
2001.02.22 |
| 申请号 |
WO2000JP04452 |
申请日期 |
2000.07.04 |
| 申请人 |
JAPAN SCIENCE AND TECHNOLOGY CORPORATION;YAMAMOTO, TETSUYA;YOSHIDA, HIROSHI;YAO, TAKAFUMI |
发明人 |
YAMAMOTO, TETSUYA;YOSHIDA, HIROSHI;YAO, TAKAFUMI |
| 分类号 |
H01L21/363;C30B23/02;C30B25/02;C30B29/16 |
主分类号 |
H01L21/363 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
