| 摘要 |
<p>The present invention provides a method and apparatus for plating a conductive material to a substrate and also modifying the physical properties of a conductive film (18b, 18c) while the substrate is being plated. The present invention further provides a method and apparatus that plates a conductive material on a workpiece surface in a 'proximity' plating manner while a pad type material or other fixed feature is making contact with the workpiece surface in a 'cold worked' manner. In this manner, energy stored in the cold worked regions (19b, 19c) of the plated layer is used to accelerate and enhance micro-structural recovery and growth. Thus, large grain size is obtained in the plated material at a lower annealing temperature and a shorter annealing time.</p> |
