Semiconductor device used as a DRAM of a capacitor-over-bitline has a lower insulating layer covering source/drain regions, an upper insulating layer and storage node contacts

摘要

Semiconductor device has a lower insulating layer (6) covering source/drain regions (5) electrically connected to capacitors (14); an upper insulating layer (7, 10) lying above the lower insulating layer, and storage node contacts (11) which penetrate the lower and upper insulating layers and reach the source-drain regions. The whole surfaces of the source/drain regions containing regions open into which the nodes open out are essentially flat. An Independent claim is also included for a process for the production of the semiconductor device. Preferred Features: The upper insulating layer is a silicon oxide layer and the lower insulating layer is a silicon nitride layer.