发明名称 METHOD FOR FORMING CONDUCTIVE PAD
摘要 PURPOSE: A fabrication method of a conductive pad is provided to prevent an electrical connection between a pad and a gate due to an over-etching of an edge portion of a gate electrode, etc., by separating a pad for a bit line/storage electrode into a first pad and a second pad and forming thereof. CONSTITUTION: A plurality of interconnections surrounded by a first insulating layer is formed on a substrate. A first conductive layer(106) is formed to cover the first insulating layer and the substrate. A first pad(128) is formed by etching the first conductive layer to expose the first insulating layer and to remain only between the interconnections. A second and a third insulating layer are formed to cover the first pad and the first insulating layer sequentially. A photoresist pattern is formed on the third insulating layer to expose the first pad. The third and the second insulating layers are etched to expose the first pad by using the photoresist pattern as a mask. After removing the photoresist pattern, a second conductive layer is formed to cover the first pad and the third insulating layer. A second pad(136) is formed by etching the second conductive layer to expose the second insulating layer.
申请公布号 KR100289749(B1) 申请公布日期 2001.02.22
申请号 KR19980017035 申请日期 1998.05.12
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 LEE, GYU PIL;YUM, GYE HUI
分类号 H01L21/28;H01L21/285;H01L21/60;H01L21/768;H01L21/8242;H01L23/485;(IPC1-7):H01L21/28 主分类号 H01L21/28
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