| 摘要 |
A semiconductor production device ceramic plate which is optimum for a semiconductor production device including a hot plate, electrostatic chuck and wafer prober, because, when the ceramic plate is used as a heater, a silicon wafer can be heated to a uniform temperature in its entirety without being damaged, and when used as an electrostatic chuck, a satisfactory chucking force is available, the ceramic plate being provided such that a semiconductor wafer is placed on a surface of a ceramic substrate or a semiconductor wafer is held a specified distance away from the surface of the ceramic substrate, characterized in that the surface, on or above which the semiconductor wafer is placed or held, of the ceramic substrate has a flatness of 1 to 50 mu m in a measurement range of -10 mm in terms of outer periphery end-to-end length.
|
