发明名称 |
METHOD FOR REDUCING THE AMOUNT OF PERFLUOROCOMPOUND GAS CONTAINED IN EXHAUST EMISSIONS FROM PLASMA PROCESSING |
摘要 |
In a method for treating perfluorocompound gas contained in exhaust emissions from plasma processing a plasma abatement device (106) is first provided downstream of a plasma processing chamber (102). Next, perfluorocompound gas contained in exhaust emissions from the plasma processing chamber (102) is channeled into the plasma abatement device (106). A gas containing water vapor is then introduced into the plasma abatement device (106). In a method for reducing the amount of perfluorocompound gas contained in exhaust emissions from plasma processing exhaust emissions from plasma processing containing a perfluorocompound gas are contacted with a gas containing water vapor. The exhaust emissions from plasma processing containing the perfluorocompound gas may be contacted with the gas containing water vapor in either a plasma abatement device (106) provided downstream of a plasma processing chamber or directly in the plasma processing chamber (102). A method for forming an integrated circuit also is described. |
申请公布号 |
WO0112300(A1) |
申请公布日期 |
2001.02.22 |
申请号 |
WO2000US22054 |
申请日期 |
2000.08.11 |
申请人 |
KONINKLIJKE PHILIPS ELECTRONICS N.V.;PHILIPS SEMICONDUCTORS, INC. |
发明人 |
GABRIEL, CALVIN, TODD |
分类号 |
B01D53/34;B01D53/68;B01D53/70;C23C16/44;H01L21/302 |
主分类号 |
B01D53/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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