发明名称 INDUCTIVELY COUPLED PLASMA PROCESS CHAMBER WITH SHIELD ELECTRODE INTERPOSED BETWEEN ANTENNA AND DIELECTRIC WINDOW
摘要 The present invention provides a process chamber and voltage distribution electrode (VDE) (120) which distributes capacitive coupling between an inductive source (119) and a plasma in a process chamber (110). The VDE is preferably slotted defining energy opaque and energy transparent portions which enable inductive coupling into the chamber while distributing capacitive coupling uniformly over the dielectric window (112). The VDE can be switched between an electrically floating configuration, a grounded configuration, or a powered configuration.
申请公布号 WO0113403(A1) 申请公布日期 2001.02.22
申请号 WO2000US19072 申请日期 2000.07.12
申请人 APPLIED MATERIALS, INC. 发明人 TODOROV, VALENTIN, N.;SATO, ARTHUR;QIAN, XUEYU;RYAN, ROBERT, E.;CHEN, JIN-YUAN;SUN, ZHIWEN
分类号 H05H1/46;H01J37/32;H01L21/302;(IPC1-7):H01J37/32 主分类号 H05H1/46
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