发明名称 |
Method of making an integrated circuit device having a planar interlevel dielectric layer |
摘要 |
<p>A method of making an integrated circuit includes depositing a conductive layer, having conductive lines with gaps therebetween, adjacent a semiconductor substrate. A fluoro-silicate glass (FSG) layer is deposited by high-density plasma chemical vapor deposition (HDP-CVD), over the patterned conductive layer and to fill the gaps between conductive lines. The method further includes chemically mechanically polishing the FSG layer and depositing an undoped oxide layer on the FSG layer. Peaks of the FSG layer which correspond to the widths of the conductive metal lines are reduced by the CMP step. Thus, a subsequent conductive layer is substantially protected from exposure to fluorine from the FSG layer. <IMAGE></p> |
申请公布号 |
EP1077483(A2) |
申请公布日期 |
2001.02.21 |
申请号 |
EP20000306709 |
申请日期 |
2000.08.07 |
申请人 |
LUCENT TECHNOLOGIES INC. |
发明人 |
ABDELGADIR, MAHJOUB ALI;MAURY, ALVARO |
分类号 |
H01L23/522;C23C14/08;C23C14/58;H01L21/02;H01L21/28;H01L21/304;H01L21/316;H01L21/3205;H01L21/768;H01L23/532;H01L29/51;(IPC1-7):H01L21/768 |
主分类号 |
H01L23/522 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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