发明名称 |
Method of fabricating shallow trench isolation structure |
摘要 |
A method of fabricating shallow trench isolation. A silicon oxide layer is formed on a substrate. The silicon oxide layer is patterned and a portion of the substrate is removed to form a trench within the substrate. A liner oxide layer is formed on the sidewall of the trench. An insulating layer is formed on the substrate and filled in the trench. A portion of the insulating layer is removed by CMP to expose the silicon oxide layer. The silicon oxide layer is removed and the STI structure is completed.
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申请公布号 |
US6190995(B1) |
申请公布日期 |
2001.02.20 |
申请号 |
US19980208282 |
申请日期 |
1998.12.08 |
申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
WU KUN-LIN;HSU CHENG-JUNG |
分类号 |
H01L21/762;(IPC1-7):H01L21/76 |
主分类号 |
H01L21/762 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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