METHOD FOR FORMATION OF SiO2 THIN FILM UTILIZING DISCHARGE PLASMA

摘要

PROBLEM TO BE SOLVED: To provide a method for forming a thin film in which the secular change of the film thickness and film quality of an SiO2 thin film formed by utilizing discharge plasma is suppressed. SOLUTION: When generating discharge plasma by applying the electric field to the space between counter electrodes under the pressure in the vicinity of the atmospheric pressure in a gaseous atmosphere contg. a silicon organometallic compd. in such a manner that the discharge electric current density is controlled to 0. 01 to 300 mA/cm2 to form a silicon organometallic compd.-conty. thin film, the concn. of the silicon organometallic compd. in the gaseous atmosphere is regurated to be 0. 01 to 0. 2 vol.%, and the electric field intensity to be 65 to 150 kV/cm.