发明名称 Zero stress bonding of silicon carbide to diamond
摘要 A multi-layer structure including a first layer; a second layer, with a coefficient of thermal expansion different than a coefficient of thermal expansion of the first layer, a bulk modulus different than a bulk modulus of the first layer and a thermal conductivity different than a thermal conductivity of the first layer; a bonding layer, having an isostatic pressure versus temperature curve with one of the first layer and the second layer which is substantially similar to an isostatic pressure versus temperature curve of the first layer and the second layer, such that a substantially stress-free bond is formed between the first layer and the second layer; wherein the first layer, the second layer, and the bonding layer are arranged as a sandwich, with the bonding layer in between the first layer and the second layer. The bonding layer may also be optional, in principle, and the first layer and the second layer bonded by diffusion, if the first layer and the second layer have sufficiently low melting temperatures.
申请公布号 US6189766(B1) 申请公布日期 2001.02.20
申请号 US19980112429 申请日期 1998.07.10
申请人 NORTHROP GRUMMAN CORPORATION 发明人 BAKER MARTIN L.;CASHION WILLIAM F.;HAGEDORN FRED B.
分类号 H01L21/04;H01L23/373;(IPC1-7):G23K1/19 主分类号 H01L21/04
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