| 摘要 |
The first-in first-out storage device has a write counter for counting as a write address the number of data write operations of a write side circuit, a read counter for counting as a read address a number of data read operations of a read side circuit, a RAM which stores data input from the write side circuit into a storage region that corresponds to the write address when the write side circuit has performed the write operation and outputs the data stored in the storage region that corresponds to the read address to the read side circuit when the read side circuit has performed the read operation, a full-state detection unit which detects whether the write operation of the write side circuit needs to be restricted or not based on the write address and read address, a flip-flop which outputs a detection result obtained by the full-state detection unit to the write side circuit in synchronization with a write clock signal based on which the write side circuit operates, an empty-state detection unit which detects whether the read operation of the read side circuit needs to be restricted or not based on the write address and read address, and another flip-flop which outputs a detection result obtained by the empty-state detection unit to the read side circuit in synchronization with a write clock signal based on which the write side circuit operates.
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