| 发明名称 |
Epitaxially grown lead germanate film and deposition method |
| 摘要 |
The present invention provides a substantially single crystal PGO film with optimal the ferroelectric properties. The PGO film and adjacent electrodes are epitaxially grown to minimize mismatch between the structures. MOCVD deposition methods and RTP annealing procedures permit a PGO film to be epitaxially grown in commercial fabrication processes. These epitaxial ferroelectric have application in FeRAM memory devices. The present invention deposition method epitaxially grows ferroelectric Pb5Ge3O11 thin films along with c-axis orientation.
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| 申请公布号 |
US6190925(B1) |
申请公布日期 |
2001.02.20 |
| 申请号 |
US19990302272 |
申请日期 |
1999.04.28 |
| 申请人 |
SHARP LABORATORIES OF AMERICA, INC. |
发明人 |
LI TINGKAI;ZHANG FENGYAN;ONO YOSHI;HSU SHENG TENG |
| 分类号 |
C30B29/22;C23C16/40;H01B3/00;H01B3/12;H01L21/205;H01L21/26;H01L21/31;H01L21/316;H01L21/8246;H01L27/10;H01L27/105;(IPC1-7):H01L21/00 |
主分类号 |
C30B29/22 |
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