| 发明名称 |
Multiple semiconductor-on-insulator threshold voltage circuit |
| 摘要 |
An ultra-large-scale integrated (ULSI) circuit includes MOSFETs which have different threshold voltages and yet have the same channel characteristics. The MOSFETs are provided on an SOI substrate. The thickness of a thin film on the substrate is varied to adjust the threshold voltage. The threshold voltage can be varied by roughly 240 mV. The thickness of the thin film can be adjusted through a LOCOS process.
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| 申请公布号 |
US6190952(B1) |
申请公布日期 |
2001.02.20 |
| 申请号 |
US19990261273 |
申请日期 |
1999.03.03 |
| 申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
XIANG QI;YU BIN |
| 分类号 |
H01L21/84;H01L27/12;(IPC1-7):H01L21/84;H01L21/320;H01L21/336;H01L21/476;H01L21/823 |
主分类号 |
H01L21/84 |
| 代理机构 |
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