发明名称 Method and apparatus for electrically endpointing a chemical-mechanical planarization process
摘要 A method and apparatus for endpointing a planarization process of a microelectronic substrate. The apparatus can include a source of electrical power having first and second electrical contacts coupled to the microelectronic substrate to form a conductive path through the substrate. An impedance of the conductive path changes as conductive material is removed from the substrate during planarization. In one embodiment, one contact can be attached to an upper surface of the substrate and the other contact can be attached to an intermediate surface between the upper surface and a lower surface of the substrate. In another embodiment, both contacts are connected to the intermediate surface and in still another embodiment, one contact can be connected to a retainer adjacent the substrate. In yet another embodiment, the power source induces a current in the conductive material, and the endpoint is detected by detecting a change in the induced current as the conductive material is removed.
申请公布号 US6190494(B1) 申请公布日期 2001.02.20
申请号 US19980126493 申请日期 1998.07.29
申请人 MICRON TECHNOLOGY, INC. 发明人 DOW DANIEL B.
分类号 B24B37/04;B24B49/10;H01L21/306;(IPC1-7):C23F1/02 主分类号 B24B37/04
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