发明名称 Semiconductor laser device
摘要 A semiconductor laser device includes a semiconductor laser element for emitting laser light onto a recording medium; beam dividing element provided in an optical path between the semiconductor laser element and the recording medium; a hologram optical element including a diffraction grating formed in a light-transmitting substrate, the hologram optical element located in an optical path between the beam dividing element and the semiconductor laser element; a servo-signal light-receiving element provided in an optical path of diffracted light transmitted through the diffraction grating for receiving the diffracted light; an information-signal light-receiving element for receiving light divided by the beam-dividing element, which is different from light divided by the beam-dividing element which is received by the diffraction grating; and a polarizing element provided in an optical path between the beam dividing element and the information-signal light-receiving element, wherein the semiconductor laser element, the servo-signal light-receiving element and the information-signal light-receiving element are provided within a single package, and the information-signal light-receiving element is provided outside an optical path of every order of diffracted light transmitted through the diffraction grating.
申请公布号 US6192020(B1) 申请公布日期 2001.02.20
申请号 US19980164726 申请日期 1998.10.01
申请人 MATSUSHITA ELECTRONICS CORPORATION 发明人 TAKASUKA SHOUICHI;IJIMA SHIN-ICHI;NAKANISHI HIDEYUKI;YOSHIKAWA AKIO
分类号 G11B7/09;G11B7/12;G11B7/13;G11B7/135;G11B11/105;(IPC1-7):G11B7/12 主分类号 G11B7/09
代理机构 代理人
主权项
地址