发明名称 |
Plasma reactor having a helicon wave high density plasma source |
摘要 |
A helicon wave, high density RF plasma reactor having improved plasma and contaminant control. The reactor contains a well defined anode electrode that is heated above a polymer condensation temperature to ensure that deposits of material that would otherwise alter the ground plane characteristics do not form on the anode. The reactor also contains a magnetic bucket for axially confining the plasma in the chamber using a plurality of vertically oriented magnetic strips or horizontally oriented magnetic toroids that circumscribe the chamber. The reactor may utilize a temperature control system to maintain a constant temperature on the surface of the chamber.
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申请公布号 |
US6189484(B1) |
申请公布日期 |
2001.02.20 |
申请号 |
US19990263642 |
申请日期 |
1999.03.05 |
申请人 |
APPLIED MATERIALS INC. |
发明人 |
YIN GERALD ZHEYAO;LEE CHII GUANG;KHOLODENKO ARNOLD;LOEWENHARDT PETER K.;SHAN HONGCHING;MA DIANA XIAOBING;KATZ DAN |
分类号 |
C23C16/00;H01J37/32;H05H;H05H1/00;H05H1/24;(IPC1-7):C23C16/00 |
主分类号 |
C23C16/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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