发明名称 |
Semiconductor device and method for fabricating the same |
摘要 |
A semiconductor device and method of fabricating the same. The semiconductor device includes a first insulating film formed on a substrate and having a plurality of holes therein; a cavity formed under the first insulating film; an impurity region formed in the substrate and around the cavity; a second insulating film formed on portions of the first insulating film to fill the holes and a space between the cavity and the impurity region; a plurality of contact holes formed to expose certain portions of the impurity region; and a plurality of wiring layers formed to be in contact with the impurity region through the contact holes.
|
申请公布号 |
US6191467(B1) |
申请公布日期 |
2001.02.20 |
申请号 |
US19990307033 |
申请日期 |
1999.05.07 |
申请人 |
HYUNDAI ELECTRONICS INDUSTRIES CO., LTD. |
发明人 |
PARK YOUNG JUNE;LEE JONG HO;LEE HYEOK JAE |
分类号 |
H01L21/02;H01L21/336;H01L21/764;(IPC1-7):H01L29/78 |
主分类号 |
H01L21/02 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|