| 发明名称 |
Method of forming node contact opening |
| 摘要 |
A method of fabricating a node contact opening includes formation of a dielectric layer on a substrate. An opening is formed with C4F8/Ar/CH2F2 as an etchant. A portion of the dielectric layer under the opening is etched with CHF3/CO as an etchant until the substrate is exposed. A node contact opening is formed.
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| 申请公布号 |
US6191042(B1) |
申请公布日期 |
2001.02.20 |
| 申请号 |
US19990246761 |
申请日期 |
1999.02.08 |
| 申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
TSAI CHIEN-HUA;LIN KUO-CHI |
| 分类号 |
H01L21/311;H01L21/768;(IPC1-7):H01L21/311 |
主分类号 |
H01L21/311 |
| 代理机构 |
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