发明名称 COMPOSITION FOR COATING FILM FORMATION AND MATERIAL FOR FORMING INSULATING FILM
摘要 PROBLEM TO BE SOLVED: To provide a composition for coating film formation that can form the coating film having excellent cracking resistance, mechanical strengths and dielectric properties as a material for interlayer insulation film. SOLUTION: The objective composition for forming coating film comprises (A) the hydrolyzate the condensed product from at least one selected from compounds of (A-1) the formula represented by the formula: R1Si(OR2)4-a (R1 is H, a fluorine atom or a monovalent organic group; R2 is a monovalent organic group; a is an integer of 0-2) and (A-2) the compound represented by the formula: R3b(R4O)3-bSi-(R7)d-Si(OR5)3-cR6c (R3, R4 and R5 may be identical or different, and individually monovalent organic groups; b and c may be identical or different from each other and are each 0-2; R7 is an oxygen atom or a group represented by -(CH2)n-; n is 1-6; d is 0 or 1) or either of one or the other and (B) a compound bearing two or more hydroxy groups in one molecule.
申请公布号 JP2001049172(A) 申请公布日期 2001.02.20
申请号 JP19990228167 申请日期 1999.08.12
申请人 JSR CORP 发明人 NISHIKAWA MICHINORI;INOUE YASUTAKE;TSUNODA MAYUMI;EBISAWA MASAHIKO;TAMAKI KENTARO;YAMADA KINJI
分类号 H01L21/312;C09D5/25;C09D183/00;(IPC1-7):C09D183/00 主分类号 H01L21/312
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