| 发明名称 |
Method of forming a multi-layered dual-polysilicon structure |
| 摘要 |
A method of forming a multi-layered dual-polysilicon structure that forms a polysilicon gate prior to formation of an ion implantation barrier and that requires fewer steps, is more economical, and permits fabrication of more compact semiconductor circuits and devices than prior art methods.
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| 申请公布号 |
US6191017(B1) |
申请公布日期 |
2001.02.20 |
| 申请号 |
US19990298068 |
申请日期 |
1999.04.22 |
| 申请人 |
LUCENT TECHNOLOGIES, INC. |
发明人 |
CHITTIPEDDI SAILESH;KELLY MICHAEL J. |
| 分类号 |
H01L21/28;H01L21/3205;H01L21/8234;H01L21/8242;H01L21/8244;H01L23/52;H01L27/088;H01L27/108;H01L27/11;H01L29/423;H01L29/43;H01L29/49;(IPC1-7):H01L21/320;H01L21/476 |
主分类号 |
H01L21/28 |
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