发明名称 PREPARATION OF PERPENDICULARLY ORIENTED CARBON NANOTUBE
摘要 PROBLEM TO BE SOLVED: To provide a method by which carbon nanotubes can directly be prepared on a substrate, the average values of the diameter and length of the carbon nanotubes can be controlled and the carbon nanotubes can selectively prepared on the substrate or only in an optional site on the substrate and perpendicularly oriented relatively to the substrate. SOLUTION: A carbon feed gas such as methane, ethylene or acetylene and hydrogen gas are used as introduction gases and carbon nanotubes are oriented in the perpendicular direction relatively to the substrate surface and prepared on the substrate surface of Ni, Fe, Co or an alloy composed of at least two kinds of the metals thereof by a plasma chemical vapor deposition(CVD) method. A glass or an Si wafer having an optional pattern comprising a metal and formed thereon is used as the substrate to carry out the CVD method and the carbon nanotubes are selectively prepared only in the patterned part.
申请公布号 JP2001048512(A) 申请公布日期 2001.02.20
申请号 JP19990221708 申请日期 1999.08.04
申请人 ULVAC JAPAN LTD 发明人 HIRAKAWA MASAAKI;TANAKA CHIAKI;MURAKAMI HIROHIKO;YAMAKAWA HIROYUKI
分类号 C01B31/02;C23C16/26;C23C16/511;(IPC1-7):C01B31/02 主分类号 C01B31/02
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