发明名称 VACUUM TREATING DEVICE AND VACUUM TREATING METHOD
摘要 PROBLEM TO BE SOLVED: To reduce the damage of the charge-up of the substrate to be treated in a vacuum treating device of a downflow system in which a plasma generating mechanism applied with high frequency electric power, and a reaction gas feeding means feeding reaction gas are provided on the upper part of the vacuum vessel, and the substrate to be treated is insalled to the lower part of the gas feeding port of the reaction gas feeding means in the vacuum vessel. SOLUTION: The inside of a plasma generating vacuum vessel 4 is disposed with a columnar porous ceramic 17 diffusing reaction gas fed from a gas feeding port 13. In this way, reaction gas can be diffused in the plasma generating vacuum vessel 4, by which the imadiation of radicals and ions in the plasma driven by the flow-down of the reaction gas on the substrate 1 to be treated can be relaxed.
申请公布号 JP2001049439(A) 申请公布日期 2001.02.20
申请号 JP19990229530 申请日期 1999.08.16
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 WATANABE AKIZO;HARAGUCHI HIDEO;YAMAMOTO SHIGEYUKI
分类号 H01L21/302;C23C16/455;C23C16/505;H01L21/3065;(IPC1-7):C23C16/455;H01L21/306 主分类号 H01L21/302
代理机构 代理人
主权项
地址