Method for forming EPROM and flash memory cells with source-side injection

摘要

A method for forming an electrically-programmable read-only-memory (EPROM) or a flash memory cell is disclosed. The EPROM or flash memory cell provides both source-side and drain-side injection, along with a reduced cell size, by forming the memory cell in a trench. The drain is formed in the top surface of the substrate, the source is formed in the bottom surface of the trench, and the stacked gate is formed over the sidewall of the trench.