发明名称 |
Lateral IGBT in an SOI configuration and method for its fabrication |
摘要 |
A lateral IGBT in an SOI configuration having a top side and an underside is proposed. The lateral IGBT has a drain zone extending to the top side and is of a first conductivity type. The underside of the LIGBT forms a substrate of a second conductivity type. A lateral insulation layer is situated between the substrate and the drain zone. At least one laterally formed region of the second conductivity type is situated in the drain zone, in the vicinity of the lateral insulation layer. These laterally formed regions being spaced apart from one another lying in one plane.
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申请公布号 |
US6191456(B1) |
申请公布日期 |
2001.02.20 |
申请号 |
US19990344927 |
申请日期 |
1999.06.28 |
申请人 |
SIEMENS AKTIENGESELLSCHAFT |
发明人 |
STOISIEK MICHAEL;VIETZKE DIRK |
分类号 |
H01L29/78;H01L29/739;H01L29/786;(IPC1-7):H01L29/76;H01L33/00 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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