Semiconductor memory device having decreased layout area and method of manufacturing the same

摘要

A word line driving circuit drives four word lines in response to a signal supplied from a main row decoder through a main word line and in response to a word line driving voltage supplied from a sub-row decoder. When the word line driving circuit is not selected by the main word line, a first reset circuit allows each word line to be short-circuited. When the word line driving circuit is selected by the main word line, second to fifth reset circuits allow the non-selected word line to bear a ground potential by using a signal of the selected word line.