Process for the forming of isolation layers of a predetermined thickness in semiconductor wafers for the manufacturing of integrated circuits

摘要

A process for forming insulating layers of predetermined thickness in semiconductor wafer for manufacturing integrated circuits by means of PHI /N<+(+)>/N<(-)>-type structures comprises the steps of: forming one or more regions of N<+(+)> semiconducting material inside a N<(-)> semiconducting material substrate; growing an epitaxial layer on the semiconducting material; defining an island structure by removing part of the epitaxial layer; selectively anodizing these regions for forming porous silicon and performing oxidation of the formed porous silicon regions.