发明名称 |
Process for forming structure with different doped regions, showing a hyperfine transition region, for forming porous silicon |
摘要 |
A process for forming structures with different conductivity showing a hyperfine transition region, for forming porous silicon for semiconductor integrated circuits, in particular provides the forming of PHI /N<+(+)>/N<(-)>-type structures for the subsequent selective anodization of one or more regions of N<+(+)> semiconducting material for forming porous silicon, so as to comprise the steps of: forming one or more regions of N<+(+)> semiconducting material inside a N<(-)> semiconducting material substrate; and growing a PHI semiconducting material epitaxial layer at a temperature lower than 900 DEG C. |
申请公布号 |
AU6723700(A) |
申请公布日期 |
2001.02.19 |
申请号 |
AU20000067237 |
申请日期 |
2000.08.02 |
申请人 |
SHINE S.P.A. |
发明人 |
MARCO BALUCANI;VITALY BONDARENKO;LEONID DOLGYI;ALDO FERRARI;GIULIO LAMEDICA;VALENTINA YAKOVTSEVA |
分类号 |
H01L21/205;H01L21/22;H01L21/306;H01L21/762 |
主分类号 |
H01L21/205 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|